Logic level 1.5mΩ 30V mosfet has low gate charge

“The SiSS52DN’s FoM represents a 29% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications,” according to New Yorker Electronics, which is stocking the part.

With 10V on the gate, resistance drops to 0.95mΩ typ – a 5% improvement over the previous generation product.

Resistance figures above at at 20A drain current. Max figures are 1.9 and 1.2mΩ respectively. Peak current is 162A at 25°C.

Input capacitance is typically 2.95nF and gate-source limits are +16 and -12V.

Contributing to the low on-resistance is the package, a 3.3 x 3.3mm thermally-enhanced PowerPAK 1212-8S.

Operating range is -55 to +150°C.

Use is expected low-side switching in synchronous rectification, synchronous buck converters and switch tank topologies, as well as at lower speed OR-ing and load switching.

The device is RG and UIS-tested, RoHS-compliant and halogen-free.

The New Yorker product page is here


Source link

We will be happy to hear your thoughts

Leave a reply

Out Put Source
Enable registration in settings - general
Compare items
  • Total (0)
Shopping cart